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| SMG138K 640mA, 50V,RDS(ON) 2[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET A SC-59 Dim A Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 Description The SMG138K utilized advanced processing techniques to achieve the lowest possible on-resistance extremely efficient and cost-effectiveness device. S 2 L 3 Top View B 1 B C D The SMG138K is universally used for all commercial industrial application D G C H Drain Gate Source G H J K J K L S Features * Simple drive Requirement * Small package outline D All Dimension in mm * RoHS Compliant Product G Marking : 138E S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 50 20 640 500 950 1.38 0.01 Unit V V mA mA mA W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 90 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SMG138 K Elektronische Bauelemente 640mA, 50V,RDS(ON) 2[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 oC) Static Drain-Source On-Resistance 2 2 o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 50 _ Typ. _ Max. _ _ Unit V V/ oC V nA uA uA Test Condition VGS=0V, ID=250uA o Reference to 25 C,ID=1mA 0.06 _ _ _ _ _ _ 0.5 _ _ _ _ 2.0 10 VDS=VGS, ID=1mA VGS= 20V VDS=50V,VGS=0 VDS=40V,VGS=0 VGS=10V, ID=0.5A VGS=4.5V, ID=0.4A 1 100 2 4 1.6 _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ [ Total Gate Charge 1 0.5 0.5 12 10 56 29 32 8 6 600 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance nC ID=0.6A VDS=50V VGS=4.5V _ _ _ _ VDD=30V ID=0.6A nS VGS=10V RG=3.3[ RD=52[ 50 _ _ pF VGS=0V VDS=25V f=1.0MHz _ _ mS VDS=10V, ID=0.6A Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Min. _ Typ. _ Max. 1.2 Unit V Test Condition IS=0.2A, VGS=0V. Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270OC/W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SMG138K Elektronische Bauelemente 640mA, 50V,RDS(ON) 2[ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SMG138K Elektronische Bauelemente 640mA, 50V,RDS(ON) 2 [ N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics http://www.SeCoSGmbH.com/ Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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